ts c 74 1 tai wan semiconductor document number: ds_p000017 8 1 version: b 15 high voltage fast - switching npn power transistor features high voltage capability fast switching speed pb - free plating rohs compliant a pplication electronic ballast switch mode power supply key performance parameters p arameter value unit bv ceo 4 5 0 v bv cb o 1050 v i c 2. 5 a v ce ( sat ) i c = 0.7 a, i b =0. 14 a 0.5 v to - 220 notes: moisture sensitivity level: level 3. p er j - std - 020 absolute m aximum ratings ( t a = 25 c unless otherwise noted ) p arameter s ymbol l imit unit collector - base voltag e v cbo 1050 v collector - emitter voltage @ v be =0v v ce s 4 5 0 v emitter - base voltage v ebo 15 v collector current i c 2 .5 a collector peak current (tp <5ms) i cm 4 a base current i b 1.5 a base peak current (tp <5ms) i bm 3 a power total dissipation @ t a =25o c p dtot 60 w maximum operating junction temperature t j +150 o c storage temperature range t stg - 5 5 to +150 o c thermal performance p arameter s ymbol limit unit junction to case thermal resistance r ? j c 1.8 o c/w junction to ambient thermal resistance r ? ja 62.5 o c/w
ts c 74 1 tai wan semiconductor document number: ds_p000017 8 2 version: b 15 electrical specifications ( t a = 25 c unless otherwise noted ) parameter conditions symbol m in t yp m ax u nit collector - base voltage i c = 0.5ma bv cbo 1050 -- -- v collector - emitter break down voltage i c = 5ma bv ceo 4 5 0 -- -- v emitter - base breakdown voltage i e = 1ma bv ebo 15 -- -- v collector cutoff current v ce = 400v, i b = 0 i ceo -- 10 250 a collector cutoff current v cb = 950v, i e = 0 i cbo -- -- 10 a collector - emitter saturation voltage i c = 0.7a , i b = 0.14a v ce(sat) 1 --- -- 0.5 v collector - emitter saturation voltage i c = 2a , i b = 0.6a v ce(sat) 2 --- 1.5 2.0 v base - emitter saturation voltage i c = 2a , i b = 0.6a v b e(sat) 1 -- 1.0 1.5 v dc current gain v ce = 5v, i c = 0.1a h fe 1 50 70 100 v ce = 3v, i c = 0.5a h fe 2 18 24 50 rise time (note 2) v cc = 5v, i c = 0.5a t r -- -- 1 s storage time (note 2) t stg 2.5 3 3.5 s fall time (note 2) t f -- -- 1.2 s repetitive avalanche energy l=2mh e ar 5 -- -- mj notes: 1. p ulse test: 38 0s, d u ty cycle 2% 2. for desig n aid only, not subject to production testing.
ts c 74 1 tai wan semiconductor document number: ds_p000017 8 3 version: b 15 ordering information part no. package packing ts c74 1 cz c0 to - 220 50pcs / tube note: 1. compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec
ts c 74 1 tai wan semiconductor document number: ds_p000017 8 4 version: b 15 package outline dimensions ( unit: millimeters) to - 220 marking diagram y = year code m = month code for halogen free product a =jan b =feb c =mar d =apr ` e =may f =jun g =jul h =aug i =sep j =oct k =nov l =dec l = lot code (1 ~9, a~z)
ts c 74 1 tai wan semiconductor document number: ds_p000017 8 5 version: b 15 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or ina ccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and conditions of sale for such p roducts, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages res ulting from such improper use or sale.
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